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| IPB180N06S4-H1 OptiMOS(R)-T2 Power-Transistor Product Summary V DS R DS(on),max ID 60 1.7 180 V m A Features * N-channel - Enhancement mode * AEC Q101 qualified * MSL1 up to 260C peak reflow * 175C operating temperature * Green Product (RoHS compliant) * 100% Avalanche tested * Ultra low RDSon * Ultra high ID PG-TO263-7-3 Type IPB180N06S4-H1 Package PG-TO263-7-3 Marking 4N06H1 Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25C, V GS=10V T C=100C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25C I D=90A T C=25C Value 180 180 720 700 180 20 250 -55 ... +175 55/175/56 mJ A V W C Unit A Rev. 1.0 page 1 2009-03-25 IPB180N06S4-H1 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=200A V DS=60V, V GS=0V, T j=25C V DS=60V, V GS=0V, T j=125C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20V, V DS=0V V GS=10V, I D=100A 60 2.0 3.0 0.03 4.0 1 A V 0.60 62 40 K/W - 10 1.3 200 100 1.7 nA m Rev. 1.0 page 2 2009-03-25 IPB180N06S4-H1 Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25C V GS=0V, I F=100A, T j=25C V R=30V, I F=180A, di F/dt =100A/s 0.6 0.95 180 720 1.3 V A Q gs Q gd Qg V plateau V DD=48V, I D=180A, V GS=0 to 10V 84 22.5 208 5.0 110 45 270 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=30V, V GS=10V, I D=180A, R G=3.5 V GS=0V, V DS=25V, f =1MHz 16840 4120 160 30 5 60 15 21900 pF 5360 320 ns Reverse recovery time2) t rr - 60 - ns Reverse recovery charge2) 1) Q rr - 90 - nC Current is limited by bondwire; with an R thJC = 0.6K/W the chip is able to carry 299A at 25C. Specified by design. Not subject to production test. 2) 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2009-03-25 IPB180N06S4-H1 1 Power dissipation P tot = f(T C); V GS 6 V 2 Drain current I D = f(T C); V GS 6 V; SMD 300 200 250 160 200 120 P tot [W] 150 I D [A] 80 40 0 0 50 100 150 200 0 50 100 150 200 100 50 0 T C [C] T C [C] 3 Safe operating area I D = f(V DS); T C = 25 C; D = 0; SMD parameter: t p 1000 1 s 10 s 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 100 100 s 100 0.5 Z thJC [K/W] I D [A] 10-1 0.1 1 ms 0.05 10 10-2 0.01 single pulse 1 0.1 1 10 100 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.0 page 4 2009-03-25 IPB180N06S4-H1 5 Typ. output characteristics I D = f(V DS); T j = 25 C; SMD parameter: V GS 720 10 V 8V 7V 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 C; SMD parameter: V GS 5 5V 6V 640 560 480 400 320 240 160 5V 4 R DS(on) [m] 6V 3 I D [A] 2 7V 8V 10 V 1 80 0 0 1 2 3 4 5 6 0 0 160 320 480 640 V DS [V] I D [A] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 720 -55 C 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 100 A; V GS = 10 V; SMD 2.5 640 25 C 560 480 400 320 240 160 80 0 3 4 5 6 7 175 C 2 R DS(on) [m] I D [A] 1.5 1 0.5 -60 -20 20 60 100 140 180 V GS [V] T j [C] Rev. 1.0 page 5 2009-03-25 IPB180N06S4-H1 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 105 3.5 10 4 Ciss V GS(th) [V] 3 2000 A C [pF] Coss 103 200 A 2.5 102 2 Crss 1.5 -60 -20 20 60 100 140 180 101 0 5 10 15 20 25 30 T j [C] V DS [V] 11 Typical forward diode characteristicis IF = f(VSD) parameter: T j 103 12 Avalanche characteristics I A S= f(t AV) parameter: T j(start) 1000 102 100 100 C 25 C I AV [A] I F [A] 150 C 175 C 25 C 101 10 100 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1 0.1 1 10 100 1000 V SD [V] t AV [s] Rev. 1.0 page 6 2009-03-25 IPB180N06S4-H1 13 Avalanche energy E AS = f(T j); I D = 90 A 14 Drain-source breakdown voltage V BR(DSS) = f(T j); I D = 1 mA 800 66 64 600 400 V BR(DSS) [V] 62 E AS [mJ] 60 200 58 0 25 75 125 175 56 -55 -15 25 65 105 145 T j [C] T j [C] 15 Typ. gate charge V GS = f(Q gate); I D = 180 A pulsed parameter: V DD 10 9 8 7 6 16 Gate charge waveforms V GS 12 V 48 V Qg V GS [V] 5 4 3 2 V g s(th) Q g (th) 1 0 0 40 80 120 160 200 240 Q sw Q gs Q gd Q gate Q gate [nC] Rev. 1.0 page 7 2009-03-25 IPB180N06S4-H1 Published by Infineon Technologies AG 81726 Munich, Germany (c) Infineon Technologies AG 2009 All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 2009-03-25 IPB180N06S4-H1 Revision History Version Revision 1.0 Date Changes 25.03.2009 Final data sheet Rev. 1.0 page 9 2009-03-25 |
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